A Write Efficient PCM-Aware Sort
نویسندگان
چکیده
There is an increasing interest in developing Phase Change Memory (PCM) based main memory systems. In order to retain the latency benefits of DRAM, such systems typically have a small DRAM buffer as a part of the main memory. However, for these systems to be widely adopted, limitations of PCM such as low write endurance and expensive writes need to be addressed. In this paper, we propose PCMaware sorting algorithms that can mitigate writes on PCM by efficient use of the small DRAM buffer. Our performance evaluation shows that the proposed schemes can significantly outperform existing schemes that are oblivious of the PCM.
منابع مشابه
PCR*-Tree: PCM-Aware R*-Tree
Phase change memory (PCM) is a byte-addressable type of non-volatile memory. Compared to other volatile and non-volatile memories, PCM is two to four times denser than dynamic random access memory (DRAM). It has better read latency than NAND flash memory. Even though the write endurance of PCM is 10 times better than NAND flash memory, it is still limited to times per PCM cell. When researchers...
متن کاملWear-Aware Algorithms for PCM-Based Database Buffer Pools
PCM can be used to overcome the capacity limit and energy issues of conventional DRAM-based main memory. This paper explores how the database buffer manager can deal with the write endurance problem, which is unique to PCM-based buffer pools and not considered by conventional buffer algorithms. We introduce a range of novel buffer algorithms addressing this problem, called wear-aware buffer alg...
متن کاملA Page-Based Storage Framework for Phase Change Memory
Phase change memory (PCM) has emerged as a promising candidate for next-generation memories, owing to its low power consumption, non-volatility, and high storage-density. However, PCM has limited write endurance, i.e., it can only undergo a limited number of write operations, leading to a short lifecycle. Thus, it is an important issue to find out an efficient way to use PCM in memory hierarchy...
متن کاملth International Symposium on Microarchitecture MICRO - 45
As a promising nonvolatile memory technology, Phase Change Memory (PCM) has many advantages over traditional DRAM. Multilevel Cell PCM (MLC) has the benefit of increased memory capacity with low fabrication cost. Due to high per-cell write power and long write latency, MLC PCM requires careful power management to ensure write reliability. Unfortunately, existing power management schemes applied...
متن کاملDefining Anomalous Behavior for Phase Change Memory
Traditional memory systems based on memory technologies such as DRAM are fast approaching their cost and power limits. Alternative memory technologies such as Phase Change Memory (PCM) are being widely researched as a scalable, costand power-efficient alternative for DRAM. However, a PCM memory cell has a limited endurance of 10− 10 writes, resulting in an ideal lifetime of only a few years whi...
متن کامل